Dynamical percolation model of conductance fluctuations in hydrogenated amorphous silicon.

Conductance fluctuations in hydrogenated amorphous silicon (a-Si:H) are simulated using a dynamical model of resistor diffusion on a lattice held at the percolation threshold. A fraction of lattice sites is designated as a trap, such that when a resistor diffuses onto that site it remains localized for a finite period of time. When a distribution of traps based on the defect density of a-Si:H is employed, the conductance fluctuations of the resistor network exhibit 1/f noise interspersed with random telegraph switching noise, as observed in experimental measurements of a-Si:H.